Acoustic III-V MEMS

Organization

National Aeronautics and Space Administration (NASA)

Reference Code

0191-NPP-NOV23-JPL-PlanetSci

Application Deadline

11/1/2023 6:00:59 PM Eastern Time Zone

Description

KACE Systems Management Appliance Administrator Console

In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties, making it a suitable material for MEMS. Particularly, GaN and its related material family are very interesting for harsh environment applications. Beyond earth, GaN based microsystems can enable low-cost and long-lasting planetary exploration missions to hot planets. Our research objective is to develop a sensor technology platform that is temperature and radiation tolerant using gallium nitride MEMS technology. In this specific project the postdoc will help with developing a thermal infrared imaging micro-instruments working at 500C using GaN based acoustic and micromechanical components.

References:

M. Rais-Zadeh, D. Weinstein, Gallium Nitride for M/NEMS, Book chapter in Piezoelectric MEMS Resonators, pp. 73-98, 2017 M. Rais-Zadeh, et. al, Gallium Nitride as an electromechanical material, J. of Microelectromechanical Microsystems, vol. 23, issue 6, pp. 1252-1271, 2014

Location:
Jet Propulsion Laboratory
Pasadena, California

Field of Science:Planetary Science

Advisors:
Mina Rais-Zadeh
mina.rais-zadeh@jpl.nasa.gov
626-460-9989

Applications with citizens from Designated Countries will not be accepted at this time, unless they are Legal Permanent Residents of the United States. A complete list of Designated Countries can be found at: https://www.nasa.gov/oiir/export-control.

Eligibility is currently open to:

U.S. Citizens;
U.S. Lawful Permanent Residents (LPR);
Foreign Nationals eligible for an Exchange Visitor J-1 visa status; and,
Applicants for LPR, asylees, or refugees in the U.S. at the time of application with 1) a valid EAD card and 2) I-485 or I-589 forms in pending status

Eligibility Requirements

Degree: Doctoral Degree.

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