High Frequency Devices and Circuits
This research area is focused on developing semiconductor based devices and circuits operating in the 100 GHz to 5000 GHz frequency range. The devices will be packaged into components that will enable the next generation of NASA instruments for Astrophysics, Earth remote sensing and Planetary discovery and exploration. GaAs based planar Schottky diodes working in the millimeter and submillimeter frequency range have seen extensive use as detectors and multipliers. Novel device design concepts that might lead to higher intrinsic efficieis are strongly encouraged. Similarly, novel circuit configurations that increase functionality per chip or leapfrog current technological boundaries are also encouraged. Device fabrication processes that allow for fast turnaround prototyping with high yields and low critical dimensions can be validated at the Micro Devices Laboratory (MDL). The MDL at JPL is a world class seminconductor device fabrication facility that can allow device researches access to state-of-the-art fabrication and characterization tools.
1) I. Mehdi, et. al., “THz Multiplier Circuits,” Proceedings of the IEEE-MTTS Symposium, June 2006.
2) I. Mehdi, et. al., “Submillimeter-Wave Schottky Diode Receivers,” Proceedings of the Joint 32nd Intl. Conf. on Infrared and Millimeter-Waves and 15th. Intl. Conf. on Terahertz Electronics, Cardiff, United Kingdom, Sept. 2007.
Location:
Jet Propulsion Laboratory
Pasadena, California
Field of Science:Technology Development
Advisors:
Imran Mehdi
Imran.Mehdi@jpl.nasa.gov
818-354-2001
Applications with citizens from Designated Countries will not be accepted at this time, unless they are Legal Permanent Residents of the United States. A complete list of Designated Countries can be found at: https://www.nasa.gov/oiir/export-control.
Eligibility is currently open to:
- U.S. Citizens;
- U.S. Lawful Permanent Residents (LPR);
- Foreign Nationals eligible for an Exchange Visitor J-1 visa status; and,
- Applicants for LPR, asylees, or refugees in the U.S. at the time of application with 1) a valid EAD card and 2) I-485 or I-589 forms in pending status
- Degree: Doctoral Degree.
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