SiC Circuit and Device Design and Fabrication
Opportunity Restricted to US Citizens Only
This postdoctoral position involves the design and fabrication of silicon carbide circuits and Micro Electromechanical Systems (MEMS) devices for high-temperature applications. The task will involve working with NASA engineers in the design and fabrication of electronic devices and circuits. Further, an understanding of fabrication processes associated with MEMS devices is preferred. The applicant should have experience in either silicon or silicon carbide device processing in a clean room setting. Further, the applicant should have experience in semiconductor device and circuit design and modeling, including use of semiconductor device and circuit simulation tools.
Location:
Glenn Research Center
Cleveland, Ohio
Field of Science:Technology Development
Advisors:
Gary W. Hunter
Gary.W.Hunter@nasa.gov
216-433-6459
Phil Neudeck
Neudeck@nasa.gov
216-433-8902
- Citizenship: U.S. Citizen Only
- Degree: Doctoral Degree.
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